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Extra info for Advanced High Speed Devices (Selected Topics in Electronics and Systems)
Wang, J. B. Johnson, M. V. Fischetti, IBM Journal of Research and Development, Vol 50 , Issue 4/5 (July 2006) Pages: 339 – 361 6. J. Wesström, Phys. Rev. Lett. 82, 2564 (1999). 7. R. Landauer, Philos. Mag. 21, 863 (1970). 8. A. M. Song, A. Lorke, A. Kriele, and J. P. Kotthaus, Phys. Rev. Lett. 80, 3831 - 3834 (1998) 9. A. M. Song, Vol 59, No 15, Physical Review B,15 Apr 1999. 10. M. Büttiker, Phys. Rev. Lett. 57, pp. 1761, 1986. 11. S. Worschech, P. Hartmann, M. Kamp, and A. Forchel, Phys. Rev.
The Late Marc Feldman was with the Electrical and Computer Engineering Department, University of Rochester, Rochester, NY 14627 USA. edu) 23 24 Q. Diduck, H. Irie & M. Margala 1. Introduction Since the introduction of the Bipolar Junction Transistor and Field Effect Transistor, little progress toward novel transistor designs has been achieved. Evolutionary changes in size and material compositions have provided better devices, however these are just improvements to a fundamentally similar structure.
The gate control over the channel can be attributed to two effects, classic channel pinchoff due to field effect, and an electron steering effect. The device can be operated as a field effect device by applying the same voltages to each gate. However, the more interesting behavior occurs when different voltages are applied. In this case, we obtain an electron steering effect, and the coupling of this lateral structure is stronger than typical top gate designs. 2 The steering effect implies the flowing electrons encounter a lateral field directing them towards one channel or the other, depending on gate bias.